A LONGi announced that it achieved 26,12% conversion efficiency for your P-type silicon heterojunction cells.
The brand, validated in tests carried out by ISFH (Institute for Solar Energy Research – Hamelin Solar Energy Research Institute) in Hamelin, Germany, was achieved on gallium-doped monocrystalline wafers (M6, 274,3cm²).
According to the company, This is the highest record for P-type cell efficiency to date, further confirming the viability of low-cost HJT mass production technology.
Also according to the manufacturer, efficiency is 0,65% higher than the 25,47% announced at the beginning of this year. LONGi's R&D team has improved the crystal extraction process in response to increased demand for performance indicators for P-HJT wafers, such as resistivity and lifetime.
The company also reported that such Cell efficiency has been significantly improved in terms of short-circuit current (Isc), open-circuit voltage (Voc) and fill factor (FF), with increases of 1,06%, 0,3% and 1,1%, respectively, due to continuous developments in interface passivation and microcrystallization processes.
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“It is worth highlighting that the Development process is similar to that of an N-type cell, fully demonstrating the versatility and reliability of the technology”, highlighted the company.
“Only in 2021, for example, will LONGi broke the world record for cell conversion efficiency seven times, with efficiencies for TOPCon type N, TOPCon type P and HJT type N cells, reaching 25,21%, 25,19% and 26,30%, respectively”, he emphasized.
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